Area-Selective Atomic Layer Deposition of ZnO by Area Activation Using Electron Beam-Induced Deposition

Area-Selective Atomic Layer Deposition of In2O3:H Using a μ-Plasma Printer for Local Area Activation

Printer for Local Area Activation Alfredo Mameli,*,† Yinghuan Kuang,† Morteza Aghaee,† Chaitanya K. Ande,† Bora Karasulu,† Mariadriana Creatore,† Adriaan J. M. Mackus,† Wilhelmus M. M. Kessels,† and Fred Roozeboom†,‡ †Department of Applied Physics, Eindhoven University of Technology, PO Box 513, 5600 MB Eindhoven, The Netherlands ‡Department Thin Film Technology, TNO, High Tech Campus 21, 5656 ...

Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation

Area-selective atomic layer deposition (ALD) is envisioned to play a key role in next-generation semiconductor processing and can also provide new opportunities in the field of catalysis. In this work, we developed an approach for the area-selective deposition of metal oxides on noble metals. Using O2 gas as co-reactant, area-selective ALD has been achieved by relying on the catalytic dissociat...

Controlled Synthesis of Pd/Pt Core Shell Nanoparticles Using Area-selective Atomic Layer Deposition

We report an atomic scale controllable synthesis of Pd/Pt core shell nanoparticles (NPs) via area-selective atomic layer deposition (ALD) on a modified surface. The method involves utilizing octadecyltrichlorosilane (ODTS) self-assembled monolayers (SAMs) to modify the surface. Take the usage of pinholes on SAMs as active sites for the initial core nucleation, and subsequent selective depositio...

Area selective atomic layer deposition of titanium dioxide: Effect of precursor chemistry

Blocking the lateral film growth at the nanoscale in area-selective atomic layer deposition.

Area-selective atomic layer deposition (ALD) allows the growth of highly uniform thin inorganic films on certain parts of the substrate while preventing the film growth on other parts. Although the selective ALD growth is working well at the micron and submicron scale, it has failed at the nanoscale, especially near the interface where there is growth on one side and no-growth on the other side...